TSC5988CTB0_技术文档_晶体_晶体管_NPN硅平面中功率晶体管NPN...

来自 : www.icpdf.com/TSC_datasheet/TS 发布时间：2021-03-24

TSC5988NPN Silicon Planar Medium Power TransistorTO-92Pin Definition:1. Emitter2. Base3. CollectorPRODUCT SUMMARYBVCBOBVCEOICVCE(SAT)150V60V6A0.55V @ IC/ IB= 6A / 300mAFeatures●Excellent gain characteristics specified up to 10AOrdering InformationPart No.TSC5988CT B0TSC5988CT A3Structure●Epitaxial Planar TypePackageTO-92TO-92Packing1Kpcs / Bulk2Kpcs / AmmoAbsolute Maximum Rating(Ta = 25oC unless otherwise noted)ParameterCollector-Base VoltageCollector-Emitter VoltageEmitter-Base VoltageCollector CurrentDCPulseSymbolVCBOVCEOVEBOICPtotTJTSTGLimit1506065201.0+150- 55 to +150UnitVVVAWCoCoTotal Power DissipationOperating Junction TemperatureOperating Junction and Storage Temperature RangeElectrical Specifications(Ta = 25oC unless otherwise noted)ParameterCollector-Base Breakdown VoltageCollector-Emitter Breakdown VoltageEmitter-Base Breakdown VoltageCollector Cutoff CurrentEmitter Cutoff CurrentConditionsIC=100uA, IE=0IC=10mA, IB=0IE=100uA, IC=0VCB=120V, IE=0VCB=120V, TA=100ºCVEB=6V, IC=0IC=100mA, IB=5mAIC=1A, IB=50mAIC=2A, IB=100mAIC=5A, IB=200mAIC=4A, IB=200mAVCE=1V, IC=6AVCE=1V, IC=10mAVCE=1V, IC=2AVCE=1V, IC=5AVCE=1V, IC=10AVCE=10V, IC=100mAVCB=10V, f=1MHz1/5SymbolBVCBOBVCEOBVEBOICBOIEBOVCE(SAT)1VCE(SAT)2VCE(SAT)3VCE(SAT)4VBE(SAT)VBE(ON)hFE1hFE2hFE3hFE4fTCobMin150606------------------10012075------Typ170708------20801502609201.05--2001407013072Max------5011050120220--10501.2 --300--------UnitVVVnAuAnACollector-Emitter Saturation VoltagemVBase-Emitter Saturation VoltageBase-Emitter on VoltagemVVDC Current Transfer RatioTransition FrequencyOutput CapacitanceMHzpFVersion: C08TSC5988NPN Silicon Planar Medium Power TransistorElectrical Characteristics Curve(Ta = 25oC, unless otherwise noted)Figure 1. DC Current Gain vs. Collector CurrentFigure 2. VCE(SAT)vs. Collector CurrentFigure 3. VBE(SAT)vs. Collector CurrentFigure 4. fT vs. Emitter CurrentFigure 5. Cob vs. Collector-Base VoltageFigure 6. Cib vs. Emitter-Base Voltage2/5Version: C08TSC5988NPN Silicon Planar Medium Power TransistorElectrical Characteristics Curve(Ta = 25oC, unless otherwise noted)Figure 7. Safety Operation AreaFigure 8. Derating Curve3/5Version: C08TSC5988NPN Silicon Planar Medium Power TransistorTO-92 Mechanical DrawingDIMABCDEFGHTO-92 DIMENSIONMILLIMETERSINCHESMINMAXMINMAX4.304.700.1690.1854.304.700.1690.18514.30(typ)0.563(typ)0.430.490.0170.0191.181.280.0460.0503.303.700.1300.1461.271.310.050.0510.370.430.0150.017Marking DiagramY= Year CodeM= Month Code(A=Jan,B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,J=Oct, K=Nov, L=Dec)L= Lot Code4/5Version: C08TSC5988NPN Silicon Planar Medium Power TransistorNoticeSpecifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,assumes no responsibility or liability for any errors or inaccuracies.Information contained herein is intended to provide a product description only. No license, express or implied, to anyintellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale forsuch products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to saleand/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,or infringement of any patent, copyright, or other intellectual property right.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customersusing or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC forany damages resulting from such improper use or sale.5/5Version: C08